Personal Details:
Date of Birth: 27th
October, 1983;
Sex: Female;
Nationality: Indian;
Languages: English,
Hindi, Bengali.
Contacts Details:
Department of Materials Science,
Indian Association for the Cultivation of Science, Jadavpur,
Kolkata-700032, INDIA.
Phone: +91-33 2473 4971 Extn: 217
Fax: +91-33 2473 2805
Email: msab2@iacs.res.in
Cell :
+91-9831009009
Educational
Qualifications:
BSc in Physics, Burdwan University (2001-2004)
MSc in Physics, Burdwan University (2004-2006)
Ph D in Physics, Calcutta University (2007- )
Area
of research
1.
Electronic
structure and ground state properties of functionalized graphene and its derivatives.
2.
Band gap
modulation under strain / functionalization of various planar nano-structure
for device physics.
3.
Mechanical
and elastic properties of planar nanostructures.
Publications
1. Band gap engineering by functionalization of BN sheet, A. Bhattacharya, S. Bhattacharya, C. Majumder, G. P. Das, Phys. Rev. B 85, 035415 (2012).
2. Anti-Kubas type interaction in Hydrogen Storage on Li decorated BHNH sheet: A First-Principles Based Study, S. Bhattacharya, A. Bhattacharya, G. P. Das, J. Phys. Chem. C 2011 (Article in Press).
3. Strain induced band gap deformation of H/F passivated graphene and h-BN sheet: A. Bhattacharya, S. Bhattacharya, G. P. Das, Phys. Rev. B 84, 075454 (2011).
4. The third conformer of graphane: A first principles DFT based study: A. Bhattacharya, S. Bhattacharya, C. Majumder, G. P. Das, Phys. Rev. B 83, 033404 (2011).
5. Transition metal doping enhanced room temperature hydrogen storage in defect modulated graphene sheet: A. Bhattacharya, S. Bhattacharya, C. Majumder, G. P. Das, J. Phys. Chem. C 114, 10297 (2010).
6. First principles prediction of the third conformer of hydrogenated BN-sheet: A. Bhattacharya, S. Bhattacharya, C. Majumder, G. P. Das, Phys. Status Solidi RRL 4, 368 (2010).
